一种高压功率器件场板技术的改进与设计  

Improvement and Design of a Field Plate for High Voltage Power Device

作　　者：李宏杰[1] 冯全源[1] 陈晓培[1] 

机构地区：[1]西南交通大学微电子研究所,成都610031

出　　处：《微电子学》2015年第2期258-261,共4页Microelectronics

基　　金：国家自然科学基金项目(61271090);国家高技术研究发展计划(863计划)重大项目(2012AA012305)

摘　　要：为了解决功率器件高击穿电压与减小表面最大电场需求之间的矛盾,提出了一种高压功率器件终端场板改进方法。通过调节金属场板和多晶硅场板的长度,使金属场板覆盖住多晶硅场板,最终使得两者的场强相互削弱,从而减小表面最大电场。采用TCAD(ISE)软件对该结构进行仿真验证,结果表明该结构能够在保证高耐压的前提下减小表面最大电场。基于所提方法,设计出了一种七个场限环的VDMOSFET终端结构,其耐压达到了893.4 V,表面最大电场强度只有2.16×105 V/cm,提高了终端的可靠性。To solve the contradiction between high breakdown voltage and high surface electric field intensity,an improved technique for the field plate of high voltage power device was proposed.The metal and poly silicon field plates were regulated,so the length of metal field plate was longer than that of poly silicon.The fields of the two plates were cancelled each other to decrease the maximum surface electric field.Structure of the field plate was simulated and tested by TCAD（ISE）.The results showed that the structure could reduce the surface electric field peak at high breakdown voltage.A VDMOSFET terminal structure of seven field limit ring with this field plate was designed.Its breakdown voltage was 893.4 Vand the maximum surface electric field was 2.16×105 V/cm.The reliability of terminal was improved evidently.

关 键 词：VDMOSFET终端结构 金属多晶硅场板 场限环 表面最大电场强度 

分 类 号：TN386[电子电信—物理电子学]