双极晶体管ELDRS实验及数值模拟  

Experimental and Numerical Simulation on Enhanced Low Dose Rate Sensitivity of Bipolar Transistors

作　　者：刘敏波[1] 陈伟[1] 何宝平[1] 黄绍艳[1] 姚志斌[1] 盛江坤 肖志刚[1] 王祖军[1] 

机构地区：[1]西北核技术研究所强脉冲辐射环境模拟与效应国家重点实验室,西安710024

出　　处：《微电子学》2015年第2期262-266,270,共6页Microelectronics

摘　　要：对典型双极晶体管的低剂量率辐射损伤增强效应进行了实验和数值模拟研究。选取了两种类型的双极晶体管,利用60Co放射源开展了不同剂量率下的辐照实验,分析了双极晶体管基极电流等参数的变化规律;建立了衬底型NPN晶体管理论模型,利用半导体模拟软件模拟了载流子在氧化层中的输运、捕获及释放等物理过程,得到了NPN晶体管基极电流随总剂量和剂量率的变化规律。结果表明,双极晶体管在不同剂量率下表现出低剂量率辐射损伤增强效应,主要是因为高剂量率和低剂量率下晶体管基区氧化层内产生的氧化物陷阱电荷所形成的空间电场不同。Enhanced low dose rate irradiation damage of typical bipolar transistor was investigated by experimental and numerical simulation.Two types of bipolar transistors were selected in the irradiation experiment at different 60 Coγdose rate,and some variation of the parameters of bipolar transistor was measured,such as the base current.The NPN transistor theory model was built to simulate the physical process of carrier＇s transport,capture and release in the oxide layer with semiconductor simulation software.The variation of the base current of the NPN transistor changed with the total dose and dose rate which consistent with the experimental laws.The results showed that the transistor excess base current was increasing while the dose rate was decreasing at the same total dose,and exhibited an enhanced low dose rate irradiation damage.This was mainly due to the different space electric field which formed by the oxide trapped charge in the oxide layer of the transistor base region at different dose rate.

关 键 词：双极晶体管 低剂量率 氧化物陷阱电荷 空间电场 

分 类 号：TN431[电子电信—微电子学与固体电子学]