TGG晶体偏心生长研究  

Study on Spiral Growth of TGG Crystal

作　　者：龙勇[1] 徐扬[1] 石自彬[1] 丁雨憧[1] 王佳[1] 付昌禄[1] 

机构地区：[1]中国电子科技集团公司第二十六研究所,重庆400060

出　　处：《压电与声光》2015年第2期277-279,共3页Piezoelectrics & Acoustooptics

基　　金：中国电子科技集团公司第二十六研究所青年创新基金资助项目(26CX-1307)

摘　　要：目前高功率全固态激光器急需使用大尺寸、高质量的铽镓石榴石晶体(Tb3Ga5O12,TGG)。采用提拉法生长(111)方向TGG晶体时,极易发生偏心生长,影响晶体质量与使用效率。针对偏心生长,通过分析TGG晶体组分挥发和熔体特性,解释了其形成机理,并提出了相应的解决方法,最后成功生长出外观完整(44 mm×70mm)的TGG晶体。通过对比圆柱状和螺旋状晶体透过率的不同,进一步解释了偏心生长的原因。The large size,high quality terbium gallium garnet（（Tb3Ga5O12,TGG）crystal is urgently needed for the high power,all solid state laser at present.The TGG single crystal along the（111）direction was grown by Czochralski method.The spiral morphology phenomenon was observed,which can influence the quality and utilization ratio of the crystal.Through analyzing the characteristic of volatile matter and liquid melt,the mechanism of spiral morphology is interpreted and the solution is put forward.We have successfully grown completed TGG crystal with size of44mm×70mm.By comparing the transmittance between cylindrical and spiral TGG crystals,the reason of spiral growth is further explained.

关 键 词：铽镓石榴石(Tb3Ga5O12 TGG)晶体 偏心生长 Ga2O3挥发 热辐射 提拉法 

分 类 号：TM277.3[一般工业技术—材料科学与工程] O782.5[电气工程—电工理论与新技术]