Single- and Few-Electron States in Deformed Topological Insulator Quantum Dots  

作　　者：李健 张东 

机构地区：[1]SKLSM,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Chinese Physics Letters》2015年第4期101-104,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 11434010;the National Basic Research Program of China under Grant No 2011CB922204

摘　　要：We theoretically investigate the single- and few-electron states in deformed HgTe quantum dots （QDs） with an inverted band structure using the full configuration interaction method. For the circular and deformed QD, it is found that the energy of edge states is robust against the shape from the circular QD in various elliptic ones. For the few electron states, electrons will firstly fill the edge states localized at the short axis, then the states localized at the long axis of the QD before filling the bulk states. The filling of the edge states can be controlled by tuning the dot size or the deformation of the geometry of the HgTe QD, respectively.We theoretically investigate the single- and few-electron states in deformed HgTe quantum dots （QDs） with an inverted band structure using the full configuration interaction method. For the circular and deformed QD, it is found that the energy of edge states is robust against the shape from the circular QD in various elliptic ones. For the few electron states, electrons will firstly fill the edge states localized at the short axis, then the states localized at the long axis of the QD before filling the bulk states. The filling of the edge states can be controlled by tuning the dot size or the deformation of the geometry of the HgTe QD, respectively.

关 键 词：QDS SINGLE and Few-Electron States in Deformed Topological Insulator Quantum Dots 

分 类 号：O471.1[理学—半导体物理] TB383[理学—物理]