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作 者:彭向阳[1] 许志海[1] 王康[2] 王建国[2] 郑峰[2] 方鹏飞[2]
机构地区:[1]广东电网公司电力科学研究院,广东省广州市510080 [2]武汉大学,湖北省武汉市430072
出 处:《中国电机工程学报》2015年第8期2097-2104,共8页Proceedings of the CSEE
摘 要:憎水恢复性是硅橡胶的重要特性,其恢复速度对电力系统用硅橡胶复合绝缘子至关重要。为研究小分子含量对硅橡胶微观结构和憎水恢复的影响,炼制八甲基环4硅氧烷(D4)质量分数含量分别为0,1,2,3,5phr(生胶的含量为100phr)的硅橡胶试片,对其进行正电子寿命谱检测,探讨D4含量的不同对硅橡胶结构的影响。对试样进行Ar等离子体处理,测量其憎水恢复速度,研究D4含量对硅橡胶憎水恢复的影响。结果表明,未加D4的硅橡胶试片中存在两种不同孔径的自由体积,对应半径分别为2.12的小孔和4.05的大孔。小分子D4含量增加,小孔尺寸(τ3)减小,对应的强度(I3)增加。大孔的尺寸(τ4)及强度(I4)不受D4含量影响。经过Ar等离子体5min处理后,D4含量越多则憎水恢复速度越快。小分子的含量影响硅橡胶憎水恢复速度。Hydrophobicity recovery is an important characteristic of silicon rubber, and the recovery speed is essential to the silicon rubber composite insulators used in power system. In order to study the microstructure and hydrophobicity recovery of silicon rubber with different content of low molecular weight(LMW), the silicon rubber samples with different quality contents of 0, 1, 2, 3 and 5phr octamethylcy-clotetrasiloxane(D4)(the content of the raw rubber was 100phr) were refined. The changes of the microstructure of the samples were studied by testing the positron lifetime spectra. The hydrophobicity recovery speed of the samples with Ar plasma treated was measured for studying the relationship between the hydrophobicity recovery speed and the content of D4. The results show that there mainly have 2.12A(τ3) and 4.05A(τ4) free volume holes in silicon rubber without D4, and with D4 content increasing, τ3 and its intensity I3 also increase, while τ4 and I4 do not change. After 5min Ar plasma treatment, samples with more D4 content show a faster hydrophobic recover speed. The content of D4 affects hydrophobicity recovery speed.
关 键 词:憎水恢复性 硅橡胶 八甲基环4硅氧烷(D4) 正电子寿命谱 自由体积 Ar等离子体
分 类 号:TM85[电气工程—高电压与绝缘技术]
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