PVT恒定高精度亚阈值CMOS电压基准源  

High-precision Sub-threshold CMOS Voltage Reference with PVT Invariant

作　　者：吴瑶 龚敏 高博 

机构地区：[1]四川省微电子技术重点实验室,成都610064

出　　处：《电子与封装》2015年第3期9-13,17,共6页Electronics & Packaging

摘　　要：提出一种基于SMIC 65 nm标准CMOS工艺库的高精度电压参考源电路。对3种不同类型偏置于亚阈值区的NMOSFET进行了讨论,采用无电阻温度补偿对温度进行高阶补偿,可以减小对工艺、电压、温度的敏感性。仿真结果表明:在不同工艺角下,电源电压、温度使基准电压Vref的变化仅为±1.36%。电压参考源的温度系数大约为4.5×10-6℃-1,电源线性调制率为2.1%m V·V-1,最小工作电压仅为0.56 V。The paper presents a pure CMOS high precision voltage reference circuit based on the subthreshold MOSFETs with the SMIC 65 nm standard CMOS process technique. Three different types of NMOSFETs and further resister-less temperature compensation are used to reduce process, voltage and temperature（PVT）sensitivity. Simulation result shows that voltage and temperature varies have little effect on the current according different process corners（Vref variation is only ±1.36%）. Temperature and power supply sensitivity of the reference voltage is 4.5×10-6℃-1（-500~1 500℃）and 2.1% m V·V-1. In addition, the supply voltage is about 0.56 V.

关 键 词：亚阈值MOSFET 电压基准源 PVT恒定 低工作电压 

分 类 号：TN402[电子电信—微电子学与固体电子学]