Ge/Si SACM-APD器件分析  

Analysis of separate-absorption-charge-multiplication Ge/Si-APD

作　　者：王巍[1] 颜琳淑 王川[1] 杜超雨 王婷[1] 王冠宇[1] 袁军[1] 王振[1] 

机构地区：[1]重庆邮电大学光电工程学院/国际半导体学院,重庆400065

出　　处：《红外与激光工程》2015年第4期1349-1353,共5页Infrared and Laser Engineering

摘　　要：Ge/Si吸收区-电荷区-倍增区分离（SACM）结构的APD作为一种新型光电探测器已成为硅基APD器件研究的重点。对SACM Ge/Si型APD器件的基本结构及其主要特性参数,包括量子效率、响应度、暗电流等进行了理论分析及仿真验证。实验结果表明：在给定的器件参数条件下,所设计的APD器件的雪崩击穿电压为25.7V,最大内部量子效率为91%,单位增益下响应度峰值为0.55 A/W,在750-1500 nm范围内具有较高响应度,其峰值波长为1050 nm;在高偏压以及高光照强度情况下,倍增区发生空间电荷效应从而导致增益降低。Ge/Si Separate-Absorption-Charge-Multiplication（SACM）-APD, as a new type of silicon APD,has become the focus of research. The device structure and its main parameters of Ge/Si SACM-APD（including quantum efficiency, responsivity, dark current, etc） were investigated in detail from the theory analysis and simulation. The simulation results show that the avalanche breakdown voltage is 25.7 V, the internal quantum efficiency is 90%, the maximum responsibility is up to 55 A/W when the gain is 1. The device is most sensitive in the spectral range of 750-1 500 nm. The peak wavelength of the APD is 1 050 nm.Under the condition of high bias and high light intensity, the electric field profile can be affected through the space charge of these electrons and holes.

关 键 词：Ge/Si雪崩二极管 吸收区-电荷区-倍增区分离 器件仿真 

分 类 号：TN215[电子电信—物理电子学]