SOI基亚微米光波导可调光衰减器的设计  

The Design of SOI Submicron Waveguide Variable Optical Attenuator

作　　者：刘瑞丹[1] 王玥[1] 吴远大[1] 安俊明[1] 胡雄伟[1] 

机构地区：[1]中国科学院半导体研究所集成光电子国家重点实验室,北京100083

出　　处：《半导体光电》2015年第1期34-37,41,共5页Semiconductor Optoelectronics

基　　金：国家"863"计划项目(2013AA031402)

摘　　要：基于硅的等离子色散效应,构建了SOI基光波导可调光衰减器(VOA)仿真模型,对SOI基亚微米脊形波导结构的模式特性、VOA器件的掺杂区间距、掺杂深度及浓度对VOA特性的影响进行了系统的模拟分析,优化设计出了小尺寸、低损耗的VOA器件,仿真结果表明:该器件在2.1V电压下即可获得30dB衰减量,功耗仅为14mW。A simulation model of SOI （Silicon on Insulator ）-based optical waveguide variable optical attenuator （VOA） was demonstrated on the basis of the plasma dispersion effect of silicon. The mode characteristics of the SOI-based submicron waveguide and the dependence of the VOA＇s performance on structural parameters, including the distance between two doped regions, doping depth and doping density, were simulated and analyzed systematically. According to the simulation results, an optimized VOA with small size and low power consumption was designed, which can achieve 30 dB attenuation while the applied voltage is 2.1 V and power consumption is only 14 roW.

关 键 词：绝缘体上硅 可调光衰减器 光波导 等离子体色散效应 

分 类 号：TN256[电子电信—物理电子学]