Application of an Al-doped zinc oxide subcontact layer on vanadium-compensated 6H–SiC photoconductive switches  

作　　者：周天宇 刘学超 黄维 代冲冲 郑燕青 施尔畏 

机构地区：[1]Shanghai Institute of Ceramics, Chinese Academy of Sciences [2]University of the Chinese Academy of Sciences

出　　处：《Chinese Physics B》2015年第4期241-245,共5页中国物理B（英文版）

基　　金：Project supported by the Innovation Program of the Shanghai Institute of Ceramics(Grant No.Y39ZC1110G);the Innovation Program of the Chinese Academy of Sciences(Grant No.KJCX2-EW-W10);the Industry–Academic Joint Technological Innovations Fund Project of Jiangsu Province,China(Grant No.BY2011119);the Natural Science Foundation of Shanghai(Grant No.14ZR1419000);the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.61404146);the National High-tech R&D Program of China(Grant Nos.2013AA031603 and 2014AA032602)

摘　　要：Al-doped ZnO thin film （AZO） is used as a subcontact layer in 6H-SiC photoconductive semiconductor switches （PCSSs） to reduce the on-state resistance and optimize the device structure. Our photoconductive test shows that the onstate resistance of lateral PCSS with an n＋-AZO subcontact layer is 14.7% lower than that of PCSS without an n＋-AZO subcontact layer. This occurs because a heavy-doped AZO thin film can improve Ohmic contact properties, reduce contact resistance, and alleviate Joule heating. Combined with the high transparance characteristic at 532 nm of AZO film, vertical structural PCSS devices are designed and their structural superiority is discussed. This paper provides a feasible route for fabricating high performance SiC PCSS by using conductive and transparent ZnO-based materials.Al-doped ZnO thin film （AZO） is used as a subcontact layer in 6H-SiC photoconductive semiconductor switches （PCSSs） to reduce the on-state resistance and optimize the device structure. Our photoconductive test shows that the onstate resistance of lateral PCSS with an n＋-AZO subcontact layer is 14.7% lower than that of PCSS without an n＋-AZO subcontact layer. This occurs because a heavy-doped AZO thin film can improve Ohmic contact properties, reduce contact resistance, and alleviate Joule heating. Combined with the high transparance characteristic at 532 nm of AZO film, vertical structural PCSS devices are designed and their structural superiority is discussed. This paper provides a feasible route for fabricating high performance SiC PCSS by using conductive and transparent ZnO-based materials.

关 键 词：photoconductive semiconductor switch SIC n＋-AZO subcontact layer on-state resistance 

分 类 号：TM564[电气工程—电器]