Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor  

作　　者：于新海 柴常春 刘阳 杨银堂 席晓文 

机构地区：[1]Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics,Xidian University

出　　处：《Chinese Physics B》2015年第4期525-529,共5页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China(Grant No.2014CB339900);the National Natural Science Foundation of China(Grant No.60776034)

摘　　要：The high power microwave （HPM） damage effect on the AIGaAs/InGaAs pseudomorphic high electron mobility transistor （pHEMT） is studied by simulation and experiments. Simulated results suggest that the HPM damage to pHEMT is due to device burn-out caused by the emerging current path and strong electric field beneath the gate. Besides, the results demonstrate that the damage power threshold decreases but the energy threshold slightly increases with the increase of pulse-width, indicating that HPM with longer pulse-width requires lower power density but more energy to cause the damage to pHEMT. The empirical formulas are proposed to describe the pulse-width dependence. Then the experimental data validate the pulse-width dependence and verify that the proposed formula P = 55τ^-0.06 is capable of quickly and accurately estimating the HPM damage susceptibility of pHEMT. Finally the interior observation of damaged samples by scanning electron microscopy （SEM） illustrates that the failure mechanism of the HPM damage to pHEMT is indeed device bum-out and the location beneath the gate near the source side is most susceptible to bum-out, which is in accordance with the simulated results.The high power microwave （HPM） damage effect on the AIGaAs/InGaAs pseudomorphic high electron mobility transistor （pHEMT） is studied by simulation and experiments. Simulated results suggest that the HPM damage to pHEMT is due to device burn-out caused by the emerging current path and strong electric field beneath the gate. Besides, the results demonstrate that the damage power threshold decreases but the energy threshold slightly increases with the increase of pulse-width, indicating that HPM with longer pulse-width requires lower power density but more energy to cause the damage to pHEMT. The empirical formulas are proposed to describe the pulse-width dependence. Then the experimental data validate the pulse-width dependence and verify that the proposed formula P = 55τ^-0.06 is capable of quickly and accurately estimating the HPM damage susceptibility of pHEMT. Finally the interior observation of damaged samples by scanning electron microscopy （SEM） illustrates that the failure mechanism of the HPM damage to pHEMT is indeed device bum-out and the location beneath the gate near the source side is most susceptible to bum-out, which is in accordance with the simulated results.

关 键 词：PHEMT damage mechanism high power microwave pulse-width 

分 类 号：O469[理学—凝聚态物理]