Metamorphic growth of 1.55 μm InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates  

作　　者：李小波 黄永清 王俊 段晓峰 张瑞康 李业弘 刘正 王琦 张霞 任晓敏 

机构地区：[1]Institute of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications (BUPT) [2]State Key Laboratory of Information Photonics and Optical Communications (BUPT) [3]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Chinese Optics Letters》2015年第3期32-36,共5页中国光学快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.61274044 and61020106007);the National Basic Research Program of China(No.2010CB327600);the Natural Science Foundational Science and Technology Cooperation Projects(No.2011RR000100);the 111 Project of China(No.B07005);the Fundamental Research Funds for the Central University(No.2013RC1205);the Specialized Research Fund for the Doctoral Program of Higher Education(No.20130005130001)

摘　　要：We fabricate a GaAs-based InGaAs/InGaAsP multiple quantum wells （MQWs） laser at 1.55 pm. Using two-step growth method and thermal cyclic annealing, a thin low-temperature InP layer and a thick InP buffer layer are grown on GaAs substrates by low-pressure metal organic chemical vapor deposition technology. Then, high- quality MQWs laser structures are grown on the InP buffer layer. Under quasi-continuous wave （QCW） condition, a threshold current of 476 mA and slope efficiency of 0.15 mW/mA are achieved for a broad area device with 50 μm wide strip and 500 μm long cavity at room-temperature. The peak wavelength of emission spectrum is 1549.5 nm at 700 mA. The device is operating for more than 2000 h at room-temperature and 600 mA.We fabricate a GaAs-based InGaAs/InGaAsP multiple quantum wells （MQWs） laser at 1.55 pm. Using two-step growth method and thermal cyclic annealing, a thin low-temperature InP layer and a thick InP buffer layer are grown on GaAs substrates by low-pressure metal organic chemical vapor deposition technology. Then, high- quality MQWs laser structures are grown on the InP buffer layer. Under quasi-continuous wave （QCW） condition, a threshold current of 476 mA and slope efficiency of 0.15 mW/mA are achieved for a broad area device with 50 μm wide strip and 500 μm long cavity at room-temperature. The peak wavelength of emission spectrum is 1549.5 nm at 700 mA. The device is operating for more than 2000 h at room-temperature and 600 mA.

关 键 词：AS In GA m InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates Metamorphic growth of 1.55 

分 类 号：TN248[电子电信—物理电子学] O471.1[理学—半导体物理]