单电子晶体管研究进展  

Advances in the Research and Development of the Single Electron Transistor

作　　者：曾令刚[1] 王庆康[1] 张欣[1] 

机构地区：[1]上海交通大学微电子技术研究所,上海200030

出　　处：《微电子学》2002年第2期86-92,共7页Microelectronics

摘　　要：文章介绍了单电子晶体管的产生背景、工作原理、最新的制备工艺、计算机数值模拟和存在的问题 。The background of the single electron transistor and its principle are introduced The up to date fabricating techniques and numerical modeling are described And its shortcomings are also discussed in the paper Furthermore, the prospect of its applications is reviewed

关 键 词：单电子晶体管 库仑阻塞 单电荷隧穿 数值模拟 

分 类 号：TN32[电子电信—物理电子学]