基于负温度系数的多晶硅电阻电热激励/压阻检测微桥谐振器的新型红外探测器（英文）  

Resonant IR detectors based on microbridge resonators electrothermally excited and piezoresistively detected using polysilicon resistors of negative TCR

作　　者：韩建强[1] 李森林[1] 李琰[1] 王小飞[1] 冯日盛[1] 

机构地区：[1]中国计量学院机电工程学院,浙江杭州310018

出　　处：《红外与毫米波学报》2015年第2期134-139,共6页Journal of Infrared and Millimeter Waves

基　　金：Supported by National Natural Science Foundation of China(61076110);Supported by Zhejiang Key Discipline of Instrument Science and Technology(JL130101)

摘　　要：报道了一种基于负电阻温度系数的多晶硅电阻电热激励/压阻检测SiO 2/Si3N4/SixNy微桥谐振器的新型红外探测器.微桥谐振器吸收的红外辐射引起微桥温度升高,激励电阻和检测电桥的阻值减小,使得恒定激励电压作用下激励电阻的静态功率和惠斯登电桥的焦耳热增加,等效于增加了辐射在微桥谐振器上的红外辐射.初步的实验证实了该方案的可行性.A novel type resonant infrared （IR） detector based on microbridge resonators electrothermally excited and piezoresistively detected using polysilicon resistors of negative temperature coefficient of resistance （TCR） was pres- ented. The temperature rise of rnicrobridges due to absorbed infrared radiation reduces the resistance of the excitation resistors and Wheatstone bridges. As a result, both the static component of the exciting power and the Joule heat of Wheatstone bridges accordingly increase with reducing the resistance. It is equivalent to increasing infrared radiation power. From preliminary experimental results, the feasibility of sensing infrared radiation is demonstrated.

关 键 词：微桥谐振器 红外探测器 多晶硅电阻 负电阻温度系数 

分 类 号：TN215[电子电信—物理电子学] TN605