绝缘层上Si/应变Si_(1-x)Ge_x/Si异质结p-MOSFET电学特性二维数值分析  

Two-dimensional numerical analysis for the electrical characteristics of Si/Strained Si_(1-x)Ge_x/Si hetero-junction-on-insulator p-MOSFET

作　　者：杨洲[1,2] 王茺[1] 于杰[1,3] 胡伟达[4] 杨宇[1] 

机构地区：[1]云南大学光电信息材料研究所,云南昆明650091 [2]中国移动通信集团设计院有限公司重庆分公司,重庆401147 [3]南京大学电子科学与工程学院固体微结构国家重点实验室,江苏南京210093 [4]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083

出　　处：《红外与毫米波学报》2015年第2期172-176,共5页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(10964016);红外物理国家重点实验室开放课题~~

摘　　要：对绝缘层上Si/应变Si1-xGex/Si异质结p-MOSFET电学特性进行二维数值分析,研究了该器件的阈值电压特性、转移特性、输出特性.模拟结果表明,随着应变Si1-xGex沟道层中的Ge组分增大,器件的阈值电压向正方向偏移,转移特性增强;当偏置条件一定时,漏源电流的增长幅度随着Ge组分的增大而减小;器件的输出特性呈现出较为明显的扭结现象.A two-dimension numerical analysis for the electrical characteristics of Si/strained Six-x Gex/Si hetero-junc- tion-on-insulator p-MOSFET has been complished. The characteristics of the threshold voltage, transfer and output were studied. The results indicate that the value of the threshold voltage has a positive offset and the transfer characteristics are improved with increase of Ge content. The growth rate of the drain-source current becomes lower with the increase of Ge content under a fixed bias voltage on the device, compained by obvious kink in the output characteristics.

关 键 词：应变Si1-xGex沟道 P-MOSFET 阈值电压 扭结 

分 类 号：TP386[自动化与计算机技术—计算机系统结构] TN401[自动化与计算机技术—计算机科学与技术]