GaN grown on nano-patterned sapphire substrates  

作　　者：孔静 冯美鑫 蔡金 王辉 王怀兵 杨辉 

机构地区：[1]Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences [2]University of Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2015年第4期26-29,共4页半导体学报（英文版）

基　　金：supported by the Suzhou Nanojoin Photonics Co.,Ltd and the High-Tech Achievements Transformation of Jiangsu Province,China(No.BA2012010)

摘　　要：High-quality gallium nitride （GaN） film was grown on nano-pattemed sapphire substrates （NPSS） and investigated using XRD and SEM. It was found that the optimum thickness of the GaN bulter layer on the NPSS is 15 nm, which is thinner than that on micro-patterned sapphire substrates （MPSS）. An interesting phenomenon was observed for GaN film grown on NPSS：GaN mainly grows on the trench regions and little grows on the sidewalls of the patterns at the initial growth stage, which is dramatically different from GaN grown on MPSS. In addition. the electrical and optical properties of LEDs grown on NPSS were characterized.High-quality gallium nitride （GaN） film was grown on nano-pattemed sapphire substrates （NPSS） and investigated using XRD and SEM. It was found that the optimum thickness of the GaN bulter layer on the NPSS is 15 nm, which is thinner than that on micro-patterned sapphire substrates （MPSS）. An interesting phenomenon was observed for GaN film grown on NPSS：GaN mainly grows on the trench regions and little grows on the sidewalls of the patterns at the initial growth stage, which is dramatically different from GaN grown on MPSS. In addition. the electrical and optical properties of LEDs grown on NPSS were characterized.

关 键 词：GAN nano-patterned sapphires （NPSS） LED two-step growth process 

分 类 号：TN304.2[电子电信—物理电子学]