高比表面积碳化硅的简易合成与表征  

Facile Synthesis and Characterization of Silicon Carbide with High Surface Area

作　　者：刘云珍[1] 洪惠云[1] 邱健斌[2] 

机构地区：[1]福建师范大学化学与化工学院,福建福州350117 [2]福建师范大学环境科学与工程学院,福建福州350117

出　　处：《福建师大福清分校学报》2015年第2期79-83,共5页Journal of Fuqing Branch of Fujian Normal University

基　　金：福建省自然科学基金资助项目(2011J01030);福建省教育厅资助项目(JB12006)

摘　　要：以硅酸钠为硅源,蔗糖为碳源,硫酸为催化剂,采用溶胶-凝胶法和碳热还原反应合成碳化硅(Si C),并用X射线粉末衍射(XRD)、N2吸附-脱附和场发射扫描电子显微镜(FESEM)等手段对产物进行表征。实验结果表明,碳化硅试样具有典型的介孔材料特征,改变硫酸与蔗糖添加量可以调控和优化产物结构;当反应物配比n(C):n(Si):n(S)=3.00:1:0.44时,可制得比表面积为235 m2·g-1、孔体积为0.46 cm3·g-1的碳化硅。Silicon carbide （SIC） with high surface area was prepared by a simple sol- gel process com- bined with carbothermal reduction method. This reaction involves the using of sodium silicate, sucrose and sulfuric acid as the silicon source, carbon source and catalyst respectively. The materials are characterized by X -ray powder diffraction （XRD）, N2 adsorption -desorption and field emission scanning electron microscope （FESEM）. Studies here show that the as -prepared SiC samples are typical mesoporous materials and their textural properties can be effectively tuned and promoted by the simple controlling the adding amounts of sulfuric acid and sucrose. When the molar ratio of n （ C ） ： n （ Si ） ： n （S） is optimized and controlled as 3.00 ： 1 ： 0.44, tubular SiC with a high surface area of 235 m^2·g^-1 and pore volume of 0.46 cm^3· g^-1 can be achieved.

关 键 词：溶胶-凝胶法 碳化硅 碳热还原 介孔材料 

分 类 号：O613.7[理学—无机化学]