Thin silicon layer SOI power device with linearly-distance fixed charge islands  

作　　者：左园 李海鸥 翟江辉 唐宁 宋树祥 李琦 

机构地区：[1]Guangxi Experiment Center of Information Science,Guilin University of Electronic Technology [2]College of Electronic Engineering,Guangxi Normal University [3]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China

出　　处：《Journal of Semiconductors》2015年第5期41-45,共5页半导体学报（英文版）

基　　金：Project supported by the Guangxi Natural Science Foundation of China(No.2013GXNSFAA019335);the Guangxi Department of Education Project(No.201202ZD041);the China Postdoctoral Science Foundation Project(Nos.2012M521127,2013T60566);the National Natural Science Foundation of China(Nos.61361011,61274077,61464003)

摘　　要：A new high-voltage LDMOS with linearly-distanced fixed charge islands is proposed （LFI LDMOS）. A lot of linearly-distanced fixed charge islands are introduced by implanting the Cs or I ion into the buried oxide layer and dynamic holes are attracted and accumulated, which is crucial to enhance the electric field of the buried oxide and the vertical breakdown voltage. The surface electric field is improved by increasing the distance between two adjacent fixed charge islands from source to drain, which lead to the higher concentration of the drift region and a lower on-resistance. The numerical results indicate that the breakdown voltage of 500 V with Ld = 45μm is obtained in the proposed device in comparison to 209 V of conventional LDMOS, while maintaining low on- resistance.A new high-voltage LDMOS with linearly-distanced fixed charge islands is proposed （LFI LDMOS）. A lot of linearly-distanced fixed charge islands are introduced by implanting the Cs or I ion into the buried oxide layer and dynamic holes are attracted and accumulated, which is crucial to enhance the electric field of the buried oxide and the vertical breakdown voltage. The surface electric field is improved by increasing the distance between two adjacent fixed charge islands from source to drain, which lead to the higher concentration of the drift region and a lower on-resistance. The numerical results indicate that the breakdown voltage of 500 V with Ld = 45μm is obtained in the proposed device in comparison to 209 V of conventional LDMOS, while maintaining low on- resistance.

关 键 词：linearly-distanced fixed charge island breakdown voltage dynamic holes ON-RESISTANCE 

分 类 号：TN386[电子电信—物理电子学]