错误记忆的可植入性  

The Implanting of False Memory

作　　者：刘振亮[1] 刘田田[1] 韩佳慧[1] 沐守宽[1] 

机构地区：[1]闽南师范大学教育科学学院,漳州363000

出　　处：《心理科学进展》2015年第5期806-814,共9页Advances in Psychological Science

摘　　要：错误记忆具有可植入性。植入性错误记忆常常与真实记忆发生混淆,成为个体经验的一部分,进而影响人们的思想、态度和行为。植入错误记忆的范式主要有错误反馈技术、想象膨胀、照片修改范式以及盛情—欺骗范式。研究表明,植入性错误记忆发生在饮食、消费以及攻击行为等活动中。植入性错误记忆与真实记忆的辨别主要包括结果、情绪、持续性以及生理机制四个方面。植入性错误记忆的解释主要有联结观和多阶段模型。目前研究存在许多问题,包括要求特征、认知反应、范式选取以及实验伦理等。未来研究需要对植入错误记忆方法的有效性、个体特征与错误记忆植入的匹配、植入性错误记忆行为结果的测量以及实际应用等进行探讨。False memories can be implanted. Confused with real memory, implanted false memory are a part of the individual experience, and will affect people＇s thought, attitude and behavior. Paradigms of implanting false memory mainly include false-feedback technique, imagination inflation, doctored photographs paradigm and treat-and-trick paradigm. Previous studies revealed that implanted false memories occurred in activities like diet, consumption and aggression. Distinguishing implanted false memory from true memory lies in four aspects of result, emotion, persistent and physiological mechanisms. There are two possible theoretical explanations for implanted false memories： associativity and multi-step model. Moreover, there are quite a lot problems existing in the research such as demand characteristics, cognitive reaction, paradigm selection, and ethics of the experiment. Further studies should examine the effectiveness on paradigms of implanting false memory, the matching of individual characteristics and implanted false memory, the measurement of behavioral consequences and applications of implanted false memory.

关 键 词：错误记忆 可植入性 植入范式 植入影响 多阶段模型 

分 类 号：B842[哲学宗教—基础心理学]