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作 者:段兴凯[1] 胡孔刚[1] 丁时锋[1] 满达虎[1] 金海霞[1]
机构地区:[1]九江学院机械与材料工程学院新能源材料研究所,江西九江332005
出 处:《材料科学与工程学报》2015年第1期26-30,共5页Journal of Materials Science and Engineering
基 金:国家自然科学基金资助项目(51161009);江西省教育厅科技资助项目(GJJ13722)
摘 要:采用真空熔炼及热压烧结方法制备了Na和Ga共掺杂n型Bi2Te2.7Se0.3热电材料。XRD结果表明,Na0.04Bi1.96-xGaxTe2.7Se0.3块体材料的XRD图谱与Bi2Te2.7Se0.3的图谱对应一致。通过EDAX技术对Na0.04Bi1.96-xGaxTe2.7Se0.3块体材料的成分进行了分析,无氧化现象。在298~523K温度范围内,在垂直于热压方向对样品的电热输运性能进行了测试分析,结果表明Na和Ga共掺杂可以有效地提高Bi2Te2.7Se0.3的载流子浓度,从而使电导率得到明显改善,但同时Seebeck系数有不同程度的损失。由于晶格热导率减小,Na掺杂及共掺杂样品Na0.04Bi1.96-xGaxTe2.7Se0.3(x=0.04)均使热导率降低。当Na掺杂浓度为0.04时,随着Ga掺杂浓度的增加,热导率呈现递增的现象,Na和Ga共掺杂样品Na0.04Bi1.96-xGaxTe2.7Se0.3(x=0.04)的热电优值获得了较明显的提高,在398K时的最大ZT值为0.75。Na and Ga co-doped n-type Bi2Te2.7Se0.3thermoelectric materials were synthesized by vacuum melting and hot pressing methods.XRD results indicate that all the characteristic peaks of the bulk Na0.04Bi1.96-xGaxTe2.7Se0.3can be indexed into those of the bulk Bi2Te2.7Se0.3.Compositional analysis of the bulk Na0.04Bi1.96-xGaxTe2.7Se0.3was carried out by energy dispersive analysis of X-rays(EDAX),in which no oxidation was detected.Electrical and thermal transport properties of the samples had been measured along the the direction perpendicular to the hot-pressing direction in the temperature range of 298-523 K.Na and Ga codoping can enhance the carrier concentration,and accordingly the electrical conductivity as well.The Seebeck coefficients of the co-doped samples have different degree of loss.Due to the decrease of lattice thermal conductivity,Na-doped and Na and Ga co-doped Na0.04Bi1.96-xGaxTe2.7Se0.3(x=0.04)samples can reduce the thermal conductivity.Thermal conductivity of the Na0.04Bi1.96-xGaxTe2.7Se0.3increases gradually with the increase of Ga-doping.Na and Ga co-doped Na0.04Bi1.96-xGaxTe2.7Se0.3(x=0.04)samples lead to a great improvement in the thermoelectric figure of merit ZT.The highest ZT of the sample can reach 0.75 at 398K.
关 键 词:共掺杂 Bi2Te2.7Se0.3 电输运性能 热输运性能
分 类 号:TB34[一般工业技术—材料科学与工程] TB43
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