国外军用大功率半导体激光器的发展现状  被引量:20

Development Situations of High Power Semiconductor Laser for Military Applications in Advanced Countries

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作  者:李明月[1] 何君[1] 

机构地区:[1]中国电子科技集团公司第十三研究所,石家庄050051

出  处:《半导体技术》2015年第5期321-327,共7页Semiconductor Technology

摘  要:由于半导体激光器具有体积小、结构简单、质量轻、转换效率高、可靠性好、寿命长、易于调制及与其他半导体器件易于集成等特点,可应用于军事、工业、医疗、通信等领域,尤其是在激光制导跟踪、激光雷达、激光引信、激光测距、激光通信、激光模拟武器、激光瞄准告警和光纤陀螺等军事领域得到广泛应用。概述了近年来美国和欧洲等国家在半导体激光器方面的主要研制计划及其所取得的成果,重点介绍了Ga As基和In P基近红外大功率半导体激光器、中远红外及太赫兹量子级联半导体激光器等的发展现状和最新研制成果。随着新型半导体材料、激光器结构和热管理等技术的发展,展望了未来半导体激光器技术的发展趋势。Characterized by small size, simple structures, light weight, high conversion efficiency, high reliability, long life, easy modulation and easy integration with other semiconductor devices, semiconductor lasers are frequently applied in military, industry, medical, communication areas, especially in laser guidance, laser radar, laser fuze, laser ranging, laser communication, laser weapon systems and laser aiming alarm and fiber optic gyroscope. Some investigations about programs and achievements of semiconductor lasers in American and European countries in recent years are introduced. Development situations and latest researches of GaAs-based and InP-based near-infrared high power semiconductor laser, far-infrared and terahertz quantum cascade semiconductor lasers are highlighted. With the development of new semiconductor material, laser structure and heat management technology, future development trend of the semiconductor laser is prospected.

关 键 词:半导体激光器 垂直腔面发射激光器(VCSEL) 大功率 量子级联激光器(QCL) 太赫兹 

分 类 号:TN365[电子电信—物理电子学]

 

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