1.3μm InGaAsSb/GaAsSb量子阱激光器有源区结构设计  

Structure design of active region in 1.3 μm InGaAsSb/GaAsSb quantum well laser

作　　者：何斌太 刘国军[1] 魏志鹏[1] 刘超[1] 安宁[1] 刘鹏程[1] 王旭[1] 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《激光与红外》2015年第5期505-508,共4页Laser & Infrared

基　　金：国家自然科学基金资助项目(No.61006039;No.61370043);吉林省科技发展计划(No.20121816;No.201201116);高功率半导体激光国家重点实验室基金(No.9140C310101120C031115)资助课题

摘　　要：为了研制满足光纤通讯需求的高性能半导体激光器,对压应变In Ga As Sb/Ga As Sb量子阱激光器有源区进行了研究。根据应变量子阱能带理论、固体模型理论和克龙尼克-潘纳模型,确定了激射波长与量子阱材料组分及阱宽的关系。基于Lastip软件建立了条宽为50μm、腔长为800μm的半导体激光器仿真模型,模拟器件的输出特性,讨论了量子阱个数对器件光电特性的影响。结果表明:当量子阱组分为In0.44Ga0.56As0.92Sb0.08/Ga As0.92Sb0.08、阱宽为9 nm、量子阱个数为2时,器件的性能达到最佳,阈值电流为48 m A,斜率效率为0.76 W/A。In order to fabricate high - performance semiconductor lasers which meet the needs of optical fiber commu- nication, an active region structure of compressive strain InGaAsSb/GaAsSb quantum well laser is designed. According to the band theory of strain quantum well, solid - model theory and Kronig - Penney model, the relationship between the lasing wavelength and the material composition of quantum well, the width of well is determined. The output char- acteristics of a semiconductor laser with stripe width of 50 μm, cavity length of 800 μm are simulated with Lastip soft- ware and the simulation model. The influence of the number of quantum wells on the output properties of device is fur- ther analyzed. The results show that the performance of the device can reach optimal for the In0.44 Ga0.56 As0. 92 Sb0. 08/ GaAs0.92 Sb0. 08 quantum well structure when well width is 9 nm and quantum well number is two. The threshold current of the device is 48 mA, and the slope efficiency is 0. 76 W/A.

关 键 词：半导体激光器 InGaAsSb/GaAsSb 量子阱 有源区 

分 类 号：TN365[电子电信—物理电子学]