基于SOI的低功耗低偏振相关损耗的可调光衰减器  

A Low Power Consumption and Low PDL VOA Based on SOI Platform

作　　者：袁配[1] 王玥[1] 吴远大[1] 安俊明[1] 胡雄伟[1] 

机构地区：[1]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083

出　　处：《半导体光电》2015年第2期189-193,共5页Semiconductor Optoelectronics

基　　金：国家"863"计划项目(2013AA031402)

摘　　要：基于硅的等离子体色散效应,构建了大尺寸SOI基光波导电光可调光衰减器(VOA)仿真模型,系统模拟分析了结构参数对VOA衰减及偏振相关特性的影响,优化设计出了低功耗、低偏振相关损耗的VOA器件,仿真结果表明,该VOA在20dB衰减下的功耗仅为24mW,偏振相关损耗为0.41dB。According to the plasma dispersion effect of Si,a simulation model of variable optical attenuator（VOA）with large cross-section based on silicon-on-insulator（SOI）platform was constructed.The dependences of VOA attenuation and polarization-dependent loss（PDL）on the structural parameters were analyzed systematically and a VOA with low power consumption and low PDL was optimally designed.The simulation results show that the corresponding power consumption is only 24 mW and the PDL is 0.41 dB at the 20 dB attenuation.

关 键 词：绝缘体上硅 等离子体色散 可调光衰减器 平面光波回路 

分 类 号：TN715[电子电信—电路与系统]