InGaN基高压LED和传统大功率LED的发光效率比较  

Comparison of Luminous Efficiency of InGaN-based High-voltage LED with Traditional High Power LED

作　　者：姚琦[1,2] 林思棋 郭自泉[1,2] 陈国龙 张纪红[1,2] 吕毅军 

机构地区：[1]厦门大学电子科学系 [2]福建省半导体照明工程技术研究中心,福建厦门361005

出　　处：《光电技术应用》2015年第2期37-41,共5页Electro-Optic Technology Application

基　　金：国家863项目(2013AA03A107);福建省产学研重大科技项目(2013H6024);福建省重点科技项目(2012H0039)资助

摘　　要：主要从三个不同角度探究并分析了基于In Ga N材料的高压LED的发光效率优于传统大功率LED的原因。为了保证实验结论的可靠性,文中所采用的实验样品具有相同的芯片尺寸和材料以及相同的封装结构。经过大量的实验证明,更均匀的电流分布和小芯片间隙的出光,使得高压LED的发光效率优于传统大功率LED。结果显示,在相同的1 W输入功率下,高压LED的发光效率比传统大功率LED高大约4.5%。The reasons of the luminous efficiency of InGaN-based high-voltage light-emitting diode （HV-LED） better than that of traditional high power （THP） LED are researched and analyzed from three different aspects. The experimental sample with same chip size, material and package structure is adopted to ensure the reliability of experiment conclusions. Experiments show that the luminous efficiency of HV-LED is better than that of THP LED for uniformer current distribution and the light from the microchip gap. The results show that the luminous efficiency of HV-LED is approximately 4.5% higher than that of THP-LED under 1 W input power.

关 键 词：高压LED 传统大功率LED 发光效率 电流密度 结温 

分 类 号：TN313.1[电子电信—物理电子学]