大面积纳米硅基薄膜太阳电池及制造设备的开发  

DEVELOPMENT OF LARGE AREA NANO CRYSTALLINE SILICON DEPOSITION SYSTEM

作　　者：蓝仕虎 赵辉 杨娜 曲铭浩 胡安红 张迎春 赵颖[3] 张晓丹[3] 汪涛 樊正海 王建强 张津岩 徐希翔 

机构地区：[1]福建铂阳精工设备有限公司研发中心,成都610200 [2]北京精诚铂阳光电设备有限公司,北京100716 [3]南开大学光电子薄膜器件与技术研究所,天津300071 [4]四川汉能光伏有限公司,成都610200

出　　处：《太阳能学报》2015年第5期1268-1273,共6页Acta Energiae Solaris Sinica

基　　金：国家高技术研究发展(863)计划(2013AA050301)

摘　　要：该文工作主要集中在用于制备非晶硅和纳米硅薄膜太阳电池的多腔室、大面积等离子体沉积系统的研发。在制备工艺方面,系统研究沉积压力、电极间距、射频电源功率等参数对薄膜沉积速率、膜厚的非均匀性、晶化率的影响;在硬件设计方面,对不同弦高气盒,密封结构气盒和非密封结构气盒进行系统比较,研究对薄膜的非均匀性、沉积速率的影响。通过工艺参数及硬件优化,最终得到沉积速率接近5?/s、晶化率约为60%、晶化率及膜厚的非均匀性均小于10%的纳米硅薄膜。以此膜层制备技术为基础,在1.1 m×1.4 m面积的透明导电玻璃基板上制备出初始功率为154.97 W(全面积转换效率10.1%)的非晶硅/纳米硅双结叠层太阳电池。This work focuses on the development of large area deposition system for nanocrystalline silicon （nc-Si） film deposition. In the equipment design part, the influence from different RF frequencies and gas box structure （closed and open ）on the film deposition was studied; in the process optimization part, deposition pressure, electrode distance, RF power density etc. were studied in terms of optimization of film deposition rate, thickness non-uniformity, ratio, and crystalline ratio non,uniformity. High quality large area nc-Si film with high deposition rate of 5 A/s, crystalline crystalline ratio around 60% and non-uniformity less than 10% was attained by optimized configuration of gas box and fabrication process of nc-Si films. Based on this high quality nc-Si film, 154.97 W output power is achieved on 1.1 m×l.4 m a-Si/ncSi tandem PV module , of which the total area efficiency is 10.1%.

关 键 词：薄膜太阳电池 纳米硅薄膜 大面积均匀性 高沉积速率 气盒 

分 类 号：TK513[动力工程及工程热物理—热能工程]