工作气压对多脉冲鞘层动力学行为的影响  

Influence of Pressure on Dynamic Behavior of Multiple Pulses Plasma Sheath

作　　者：李义[1] 敬晓丹[1] 李久会[1] 雷明凯[2] 

机构地区：[1]辽宁工业大学理学院,锦州121001 [2]大连理工大学材料科学与技术学院表面工程研究室,大连116024

出　　处：《真空科学与技术学报》2015年第5期589-593,共5页Chinese Journal of Vacuum Science and Technology

基　　金：辽宁工业大学教师科研启动基金项目(X201320)

摘　　要：分别采用低压非稳态扩散流体模型和碰撞流体模型描述了等离子体浸没离子注入平面靶表面过程中等离子体回复扩散和鞘层演化行为,通过数值求解两流体模型研究了不同工作气压下多脉冲鞘层的时空演化动力学特征。计算结果表明,在连续脉冲作用下,开始几个脉冲内的注入离子流和离子碰撞能量较高,几百微秒内迅速降低并达到一个稳定值。多个脉冲作用后的离子注入参数稳定值比初始一个脉冲内的结果更准确,更具理论指导意义。工作气压对初始等离子体密度分布、注入离子流和离子碰撞能量影响显著。较低的工作气压无论对提高离子注入剂量还是离子碰撞能量都是十分有利的。The impact of pressure on the dynamic behavior of plasma sheath close to target surface,generated by consecutive pulses in film growth by plasma immersion ion implantation（PIII）,was empirically approximated,mathematically modeled with the low pressure unsteady diffusion fluid and the collision fluid theories,analytically calculated and numerically simulated.The results show that the pressure significantly affects the current and energy of implanted ions;and that steady plasma sheath rapidly forms after only a few initial pulses,possibly because of the high current and energy.A reduced pressure increases the initial plasma density,current and energy of the implanted ions.For instance,apressure-decease from 0.5to 0.02 Pa increases the steady plasma density from 5.08×1012 to 1.03×1014 m-3,the average current density from 0.08 to 0.51A/m-2,and the average energy from 0.3×103 to 5.4×103 eV,respectively.We suggest that the lowest allowable pressure may optimize the film growth conditions by PⅢ.

关 键 词：等离子体浸没离子注入 多脉冲鞘层 等离子体扩散 流体模型 

分 类 号：O539[理学—等离子体物理] TL612.3[理学—物理]