Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression  

作　　者：何晓光 赵德刚 江德生 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2015年第6期516-520,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61377020,61376089,61223005,and 61176126);the National Science Fund for Distinguished Young Scholars,China(Grant No.60925017)

摘　　要：Models for calculating the sheet densities of two-dimensional electron gas （2DEG） induced by spontaneous and piezoelectric polarization in A1GaN/GaN, A1GaN/A1N/GaN, and GaN/A1GaN/GaN heterostructures are provided. The detailed derivation process of the expression of 2DEG sheet density is given. A longstanding confusion in a very widely cited formula is pointed out and its correct expression is analyzed in detail.Models for calculating the sheet densities of two-dimensional electron gas （2DEG） induced by spontaneous and piezoelectric polarization in A1GaN/GaN, A1GaN/A1N/GaN, and GaN/A1GaN/GaN heterostructures are provided. The detailed derivation process of the expression of 2DEG sheet density is given. A longstanding confusion in a very widely cited formula is pointed out and its correct expression is analyzed in detail.

关 键 词：high electron mobility transistors GAN two-dimensional electron gas polarization effect 

分 类 号：TN386[电子电信—物理电子学]