欠叠异质栅纳米碳管场效应管的量子输运特性(英文)  

Quantum Transport in Hetero-material-gate CNTFETs with Gate Underlap: A Numerical Study

作　　者：王伟[1] 张露[1] 李娜[1] 杨晓[1] 张婷[1] 岳工舒 

机构地区：[1]南京邮电大学电子科学与工程学院,南京210023

出　　处：《计算物理》2015年第2期229-239,共11页Chinese Journal of Computational Physics

基　　金：Supported by Natural Science Foundation of Higher Education in Jiangsu Province(10KJD510006)

摘　　要：采用量子力学模型,对欠叠栅对传统单质栅碳纳米管场效应管(简称C-CNTFET)和异质栅碳纳米管场效应管(简称HMG-CNTFET)电学特性的影响进行理论研究,该模型基于二维非平衡格林函数(NEGF)泊松方程自洽求解.仿真结果表明,C-CNTFET的截止频率可高达THz量级,另外,通过比较C-和HMG-CNTFET可以看出,CCNTFET增加欠叠栅后能够提高器件的开关速度,但不利于提高器件的开关电流比.在HMG-CNTFET中,欠叠栅的采用不仅能够同时改善亚阈值特性和开关电流比,还能降低输出电导.Effects of gate underlap on electronic properties of conventional single-material-gate CNTFET （ C-CNTFET） and hetero-material-gate CNTFET （ HMG-CNTFET ） are investigated theoretically in a quantum kinetic model. The model is based on two-dimensional non-equilibrium Green’ s functions （ NEGF） solved self-consistently with Poisson’ s equations. It shows that intrinsic cutoff frequency of C-CNTFETs reaches a few THz. In addition, a comparison study was performed about C-and HMG-CNTFETs. Calculated results show that, C-CNTFETs with longer underlap have better switching speed but less on/off current ratios. For HMG-CNTFET, gate underlap improves sub-threshold performance and switching delay times, and decreases output conductance significantly.

关 键 词：碳纳米管场效应管 非平衡格林函数 欠叠栅 短沟道效应 异质栅 

分 类 号：O484.3[理学—固体物理]