基于最优控制电压的高鲁棒性PUF电路设计  

Design of Highly Robust PUF Based on the Optimal Gate Voltage

作　　者：汪鹏君[1] 张学龙[1] 张跃军[1] 

机构地区：[1]宁波大学电路与系统研究所,浙江宁波315211

出　　处：《电子学报》2015年第5期907-910,共4页Acta Electronica Sinica

基　　金：国家自然科学基金(No.61274132;No.61474068;No.61234002);博士点基金(No.20113305110005);浙江省自然科学基金(No.Q14F04002)

摘　　要：物理不可克隆函数(Physical Unclonable Functions,PUF)电路作为一种新型的信息安全电路,依赖集成电路制造过程中硅器件的固有工艺偏差产生密钥.本文提出一种高鲁棒性PUF电路设计方案,首先分析MOSFET在零温度系数点(Zero Temperature Coefficient,ZTC)的工作特性,然后结合提高PUF电路鲁棒性的途径,确定PUF电路的结构及最优控制电压,最终达到密钥稳定可靠的目的.在TSMC 65nm CMOS工艺下对所设计的PUF电路进行版图设计,面积为14.89μm×12.14μm.实验结果显示在最优控制电压下PUF电路的鲁棒性最低为96%.Physical Unclonable Functions （PUF） ,as a kind of innovative secure circuits, extract key relying upon the intrin- sic process variations in silicon devices.This paper proposes a scheme of highly robust PUF.First,we analyze the properties of the MOSFET working at the point of Zero Temperature Coefficient. And then we determine the structure and the optimal gate voltage of PUF by combining the approaches that improve the robustness of PUF circuits.All of which lead to the goal of making the keys sta- ble and reliable at last. This design is implemented in TSMC 65nm CMOS technology and the layout area occupies 14.89μm×12.14μm. The simulation results show that the reliability of PUF is not less than 96% ,which is better than other PUF circuits.

关 键 词：物理不可克隆函数 零温度系数点 鲁棒性 电路设计 

分 类 号：TP331[自动化与计算机技术—计算机系统结构]