Design of high reliability RF-LDMOS by suppressing the parasitic bipolar effect using enhanced p-well and double epitaxy  

作　　者：徐向明 黄景丰 遇寒 钱文生 周正良 韩波 王勇 王鹏飞 张卫 

机构地区：[1]State Key Laboratory of ASIC and System School of Microelectronics Fudan University [2]HuaHong Grace Semiconductor Manufacturing Corporation [3]School of Computer and Information Engineering Fuyang Teachers College

出　　处：《Journal of Semiconductors》2015年第6期93-98,共6页半导体学报（英文版）

基　　金：Project supported by the Chinese National Key Project(No.2012ZX02502)

摘　　要：A laterally diffused metal-oxide-semiconductor （LDMOS） device design with an enhanced p-well and double p-epitaxial structure is investigated for device ruggedness improvement while keeping its high device per- formance under high frequency. Based upon the device design, radio-frequency （RF） LDMOS transistors for GSM （global system for mobile communication） application have been fabricated by using 0.35/zm CMOS technolo- gies. Experimental data show that the proposed device achieves a breakdown voltage of 70 V, output power of 180 W. The RF linear gain is over 20 dB and the power added efficiency （PAE） is over 70% with the frequency of 920 MHz. In particular, it can pass the 20 ： 1 voltage standing wave ratio （VSWR） load mismatch biased at drain DC supply voltage of 32 V and output power at 10-dB gain compression point （P10dB）. The device ruggedness has been remarkably improved by using the proposed device structure.A laterally diffused metal-oxide-semiconductor （LDMOS） device design with an enhanced p-well and double p-epitaxial structure is investigated for device ruggedness improvement while keeping its high device per- formance under high frequency. Based upon the device design, radio-frequency （RF） LDMOS transistors for GSM （global system for mobile communication） application have been fabricated by using 0.35/zm CMOS technolo- gies. Experimental data show that the proposed device achieves a breakdown voltage of 70 V, output power of 180 W. The RF linear gain is over 20 dB and the power added efficiency （PAE） is over 70% with the frequency of 920 MHz. In particular, it can pass the 20 ： 1 voltage standing wave ratio （VSWR） load mismatch biased at drain DC supply voltage of 32 V and output power at 10-dB gain compression point （P10dB）. The device ruggedness has been remarkably improved by using the proposed device structure.

关 键 词：RF power LDMOS semiconductor device RUGGEDNESS reliability 

分 类 号：TN386[电子电信—物理电子学]