溅射气氛对N掺杂ZnO薄膜性能的影响  

Effect of Sputtering Ambient on The Properties of N Doped ZnO Thin Films

作　　者：高丽丽[1,2] 刘军胜[1] 宋文福[1] 张跃林[1] 

机构地区：[1]北华大学物理学院,吉林吉林132013 [2]吉林大学物理学院,吉林长春130012

出　　处：《发光学报》2015年第3期317-321,共5页Chinese Journal of Luminescence

摘　　要：利用磁控溅射系统,N2和Ar作为溅射气体,生长N掺杂Zn O薄膜。溅射气氛中氮气流量分别为0,8,20,32 m L/min,通过改变氮气的流量,研究薄膜性能的变化。结果发现,随着溅射气氛中氮气流量的增加,薄膜的电阻率增加,薄膜中NO与(N2)O的掺杂浓度同时在变大。当氮气流量为8 m L/min时,N的有效掺杂效率最高。另外,随着溅射气氛中氮气流量的增加,薄膜的厚度在减小。Using radio frequency magnetron sputtering technique, N doped ZnO films were prepared on quartz substrate with mixture of nitrogen and argon as sputtering gas, and the nitrogen flux was 0, 8, 20, 32 mL/min, respectively . The effects of the nitrogen flux on the structure and properties of N doped ZnO thin films were investigated. It is found that the resistivity of the films increases with the increasing of the nitrogen flux, and the content of NO and （ N2 ） O increases, too. When the nitro-gen flux is 8 mL/min , the deposited film has the best effective doping efficiency of nitrogen. Fur-thermore, the thickness of ZnO∶N films decreases with the nitrogen flux increasing.

关 键 词：ZNO薄膜 N掺杂 溅射气氛 光电性能 

分 类 号：O484.4[理学—固体物理] O472[理学—物理]