AF9M1对KNN基陶瓷的结构与压电性能的影响  

Effect of AF9M1 on the Microstructure and Piezoelectric Properties of KNN-based Ceramics

作　　者：赵光乾 马家峰[2] 彭铃 张津玮[1] 

机构地区：[1]桂林电子科技大学广西信息材料重点试验室,广西桂林541004 [2]桂林理工大学材料科学与工程学院,广西桂林541004

出　　处：《电工材料》2015年第3期14-17,共4页Electrical Engineering Materials

摘　　要：采用传统固相烧结法制备了K0.5Na0.5Nb O3-x Al(Fe0.9Mn0.1)O3(KNN-AF9M1)无铅压电陶瓷,着重研究了AF9M1的不同掺杂量(x分别为0,0.02,0.04,0.06,0.08)对陶瓷显微结构和压电性能的影响。结果表明,室温下,少量AF9M1的掺杂并未改变KNN基陶瓷正交相钙钛矿结构,但有助于陶瓷晶粒的生长及致密化。随着AF9M1含量的增加,陶瓷的压电常数(d33)、机电耦合系数(kp)、机械品质因数(Qm)和居里点(Tc)均先增大后减小,当x=0.04时,均达到最大值,分别为121 p C/N、0.35、179和392℃。The lead-free K0.5Na0.5NbO3-xAl（Fe0.9Mn0.1）O3（KNN-AF9M1） piezoelectric ceramics were prepared by the traditional solid state sintering processing. The effects of AF9M1 doping amounts （x=0,0.02,0.04,0.06,0.08） on the microstructure and piezoelectric properties of samples were investi-gated. The results show that small amount of AF9M1 doping has not changed the orthorhombic perovskite structure of KNN-based ceramics at room temperature, but is effective for grain growth and their densification. With increasing the AF9M1 content, the d33、kp、Qm and Tc of the ceramics firstly increase and then decrease. At x=0.04, the d33、kp、Qm and Tc reach their maximum values which are 121 pC/N、0.35、179 and 392℃, respectively.

关 键 词：压电陶瓷 KNN 显微结构 压电性能 

分 类 号：TM282.3[一般工业技术—材料科学与工程]