Si基短波碲镉汞材料分子束外延生长研究  

Research on short-wavelength HgCdTe film growth on silicon composite substrate by molecular beam epitaxy growth

作　　者：王经纬[1] 高达[1] 

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2015年第6期646-649,共4页Laser & Infrared

摘　　要：报道了在中波工艺基础上,Si基碲镉汞分子束外延短波工艺的最新研究进展,通过温度标定、使用反射式高能电子衍射、高温计的在线测量和现有的中波Si基碲镉汞温度控制曲线建立及优化了Si基碲镉汞短波材料的生长温度控制曲线;获得的Si基短波HgCdTe材料表面光亮、均匀,表面缺陷密度小于3000 cm-2;基于此技术成功制备出了Si基短/中波双色材料。Based on the fabrication technology of MW HgCdTe,the recent research progress on molecular beam epitaxy growth of SW-HgCdTe on Si composite substrate is reported.Through the original temperature calibration,the use of in-situ measurements such as RHEED and pyrometry,the temperature-controlling figure profile of MW-MCT,a cus-tomized temperature-controlling figure profile for SW-MCT was built and optimized.The defects density of optimized Si based SW-HgCdTe is less than 3000 cm -2 and the surface is smooth and uniform.SW/MW dual-band HgCdTe has been also fabricated based on this technology.

关 键 词：硅基碲镉汞 分子束外延 短波碲镉汞外延 短/中波双色碲镉汞 

分 类 号：TN213[电子电信—物理电子学]