被釉BeO基片薄膜电阻器的设计和制备  

Design and Fabrication of Thin Film Resistors on the Glass Glazed BeO Substrate

作　　者：张鹏[1] 杨传仁[1] 曾理[1] 陈宏伟[1] 杨俊峰 张继华[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054 [2]广州天极电子科技有限公司,广东广州510288

出　　处：《压电与声光》2015年第3期540-542,共3页Piezoelectrics & Acoustooptics

基　　金：广东省教育部产学研结合基金资助项目(2012B091000059)

摘　　要：基于被釉BeO陶瓷基片设计并制备了DC-20GHz薄膜电阻器。HFSS软件仿真结果表明,在该频率范围内,所设计薄膜电阻器的电压驻波比(VSWR)均小于1.2。利用射频磁控溅射法和光刻工艺在被玻璃釉平整化改性过的BeO基片上制备了所设计的薄膜电阻器。测试结果和仿真结果的对比表明,BeO基片表面的玻璃釉层并不会对电阻器的微波性能造成明显的不良影响。The thin film resistors with DC-20 GHz operating frequency were designed and fabricated on the glass glazed planarized modified BeO ceramic substrate. The simulation results by HFSS show that the voltage standing wave ratio（VSWR） of the designed thin film resistor is less than 1.2 at this frequency range. The thin film resistors were fabricated on the glass glazed planarized modified BeO substrate by RF magnetron sputtering and lithography process . The comparison of the test results and the simulation results show that the glass glaze layer on the surface of the BeO substrate don＇t have obvious adverse effects on the microwave properties of the resistor.

关 键 词：薄膜电阻器 TaN薄膜 玻璃釉 BeO陶瓷基片 射频磁控溅射 

分 类 号：TN61[电子电信—电路与系统]