ZnCdS/Cd_xZn_(1-x)Se_yS_(1-y)量子点量子阱及有机-无机LED  

ZnCdS/Cd_xZn_(1-x)Se_yS_(1-y) Quantum Dot Quantum Well and Organic-Inorganic LEDs

作　　者：李彦沛 刘孔[1] 卢树弟 寇艳蕾[1] 岳世忠[1] 

机构地区：[1]中国科学院半导体研究所半导体材料科学重点实验室,北京100083

出　　处：《微纳电子技术》2015年第6期348-354,395,共8页Micronanoelectronic Technology

基　　金：国家自然科学基金重大资助项目(61204002);国家重点基础研究发展计划(973计划)资助项目(2014CB643503)

摘　　要：为了提高无机纳米发光材料的发光效率和有机-无机杂化电致发光器件的性能,使用有机金属前驱体法,制备了具有化学组分梯度的ZnCdS/CdxZn1-xSeyS1-y量子点量子阱材料以及CdxZn1-xSeyS1-y量子点材料。观察到相同反应温度与反应物配比所制得的ZnCdS/CdxZn1-xSeyS1-y光致发光峰相较于CdxZn1-xSeyS1-y出现明显的蓝移,且荧光量子效率有一定的提高,最高可达60.6%。通过在反应过程中调节Se与S的比例,观察到了反应产物的光致发光峰随Se比例的减少而逐渐蓝移。结果表明,与使用纯无机纳米材料作为有源层的器件相比,使用量子点量子阱材料制备的有机-无机杂化LED的电流效率提高了4.3倍。In order to improve the luminous efficiencies of inorganic nano-materials and the performances of organic-inorganic hybrid electroluminescent devices,the ZnCdS/CdxZn1-xSeyS1-y quantum dot quantum well material and CdxZn1-xSeyS1-y quantum dot material with chemical composition gradient were prepared by the organic metal precursor method.The photoluminescence peak of ZnCdS/CdxZn1-xSeyS1-yprepared under the same reaction temperature and reactant proportion appears significant blue shift compared with that of CdxZn1-xSeyS1-y.The fluorescence quantum efficiency of ZnCdS/CdxZn1-xSeyS1-y has a certain improvement,and the maximum value reaches 60.6%.By adjusting the proportions of Se and S in the reaction process,the obvious blue shift of the photoluminescence peak for the reaction product with the decline of Se proportion was observed.The result shows that compared with the device fabricated with inorganic active layers,the current efficiency of the organic-inorganic hybrid LED fabricated by using the quantum dot quantum well material increases 4.3 times.

关 键 词：量子点量子阱(QDQW) 发光材料 有机-无机杂化 有源层 电致发光 

分 类 号：O471.1[理学—半导体物理] TN312.8[理学—物理]