硅-硅直接键合后硅片的机械减薄过程  

Mechanical Thinning Process of the Wafer After the Si-Si Direct Bonding

作　　者：陈晨[1] 杨洪星[1] 何远东[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《微纳电子技术》2015年第6期402-405,共4页Micronanoelectronic Technology

摘　　要：硅-硅直接键合硅片的机械减薄工艺对器件的性能有很大的影响。采用磨削、化学腐蚀和机械/化学抛光的方法对硅-硅直接键合硅片进行减薄加工,分析了减薄过程中各个工序键合片的平整度、弯曲度和翘曲度变化,并对减薄后硅片的厚度均匀性进行了考察。本次实验最终获得了几何参数良好、厚度满足要求且均匀的晶片。磨削过程会使弯曲度和翘曲度升高,可以通过化学腐蚀的方法降低弯曲度和翘曲度,化学腐蚀过程虽然使平整度升高,但可以通过机械/化学抛光的方法降低平整度。采用该减薄技术对直接键合硅片进行机械减薄具有可行性。Mechanical thinning technology after Si-Si direct bonding wafer has a great influence on the performances of the devices. The thinning process after Si-Si direct bonding wafer was completed by the methods of grinding, chemical corrosion and mechanical/chemical polishing. The geometrical parameters including flatness, bow and warp during the mechanical thinning proces- ses were analyzed, and the thickness uniformity of the wafer after thinning process was investigated. The wafers with good geometric parameters and uniform thickness for meeting the requirements were obtained. The chemical polishing method can decrease the bow and warp even though the grinding process increases them. The flatness is increased by the chemical polishing method and improved by the mechanical/chemical polishing method. The direct bonding silicon wafer is feasible by this thinning technology.

关 键 词：硅-硅直接键合(SDB) 机械减薄 平整度 弯曲度 翘曲度 

分 类 号：TN305[电子电信—物理电子学]