基于标准CMOS的低压高效正向注入型Si-LED阵列研究  

Research on forward-biased Si-LED arrays with low operating voltage and high conversion efficiency based on standard CMOS process

作　　者：武雷[1] 谢生[1] 毛陆虹[1] 郭维廉[1] 张世林[1] 崔猛[1] 谢荣[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《光电子．激光》2015年第6期1048-1052,共5页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金(61036002;61474081)资助项目

摘　　要：基于标准CMOS工艺的n^＋源/漏区和p-sub,设计了一种楔形n^＋pn^＋结构的硅基发光二极管（Si-LED）阵列,并经UMC 0.18μm 1P6M CMOS工艺制备。测试结果表明,设计的Si-LED在0.9-1.5V范围内正常工作,与CMOS电路的电源电压兼容,其发光峰值波长在1 100nm附近;注入电流为390mA时,器件的发光功率可达1 800nW,平均功率转换效率为3.5×10^-6。由于工作电压低、发光功率高,设计的LED器件有望在光互连领域得到广泛应用。Optical interconnection has been studied to replace electronic intereonnection because of its sig- nificant performance advantages, such as high speed and low crosstalk. Silicon based light emitting device （Si-LED） with low operating voltage and high conversion efficiency is the key to realizing optical interconnection. Based on the n^＋ source/drain region of standard CMOS technology, this work designs and fabricates an Si-LED array with wedge-shaped n^＋ pn^＋ configuration in the commercial standard 0.18 μm 1P6M CMOS process offered by United Microelectronic Corporation （UMC） without any modification. The measurement results indicate that the designed Si-LED can operate properly between 0.9 V and 1.5 V, which is compatible with the power supply of CMOS integrated circuits. When the device is forward-biased,the light emitting spectrum of the Si-LED has a peak at about 1100 nm. An optical power of 1800 nW is obtained at a forward current of 390 mA,and the power conversion efficiency is 3.5 × 10^-6. Due to the features of low operating voltage and high optical power,our N-LED can be monolithically in tegrated with the CMOS circuits,and has a potential application in the field of optical interconnections.

关 键 词：硅基发光二极管(Si-LED) 标准CMOS工艺 正向偏置 低工作电压 光互连 

分 类 号：TN383.1[电子电信—物理电子学]