半导体器件贮存可靠性快速评价方法  

Storage Reliability Assessment of Semiconductor Devices Based on Accelerated Life Test

作　　者：罗俊[1,2] 代天君[2] 刘华辉[2] 杨勇[2] 张振宇[2] 杨少华[3] 

机构地区：[1]西安电子科技大学微电子学院宽禁带半导体材料与器件重点实验室,西安710071 [2]中国电子科技集团公司第二十四研究所,重庆400060 [3]工业和信息化部电子第五研究所电子元器件可靠性物理及其应用技术国家级重点实验室,广州510610

出　　处：《微电子学》2015年第3期387-390,共4页Microelectronics

基　　金：模拟集成电路重点实验室基金资助项目(9140C090406120C09037)

摘　　要：为解决复杂环境下半导体器件的贮存可靠性评估问题,结合半导体器件的贮存失效机理及其寿命-应力模型,提出了基于多贮存应力加速寿命试验的半导体器件贮存可靠性评估方法。在此基础上,以某款中频对数放大电路为研究对象,通过对加速寿命试验结果的分析,获得了电路在规定贮存时间下的可靠度。For semiconductor devices applied in complicated circumstance, it is difficult to assess the storage reliability by using traditional reliability analysis method. Aiming at this problem, a new storage estimation method for semiconductor devices was proposed based on multiple-stress accelerated test degradation test. The storage reliability of a certain type of intermediate frequency logarithmic amplifier under specific working condition was obtained by analyzing the results of designed test.

关 键 词：半导体器件 加速寿命试验 多贮存应力 贮存可靠性 

分 类 号：TN722.7[电子电信—电路与系统]