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作 者:陆晓东[1] 张鹏[1] 周涛[1] 赵洋[1] 李媛[1] 吕航[1]
出 处:《人工晶体学报》2015年第5期1247-1253,共7页Journal of Synthetic Crystals
基 金:国家自然科学基金(11304020);辽宁省教育厅一般项目(L2012401)
摘 要:先基于实际工艺条件和频域有限差分法,优化了纳米压印三角带型a-Si太阳电池织构结构,然后重点探讨了有源层和铝背反镜厚度偏差、Si Nx增透膜折射率和厚度偏差及织构结构几何尺寸偏差对a-Si太阳电池光电流密度的影响。研究表明:TM模受有源层和铝背反镜厚度偏差、Si Nx增透膜折射率和厚度偏差及织构结构几何尺寸偏差的影响较小,平均光电流密度的变化主要受TE模光电流随工艺偏差的影响;增透膜和压印模板制备过程中,有效控制工艺参数的偏离是获得最优a-Si太阳电池设计性能的关键。Based on the process condition and frequency domain finite difference method, the texture structure of a-Si solar cell was first optimized and then the deviation influence of the process errors of active layer and aluminum film thickness, SiNx film refractive index and thickness and texture structural geometric dimension on the photocurrent density were discussed with emphasis. The results show that the photocurrent densities of TM modes are not appreciably affected by the process parameter deviation of active layer and aluminum film thickness, SiNx film refractive index and thickness and texture structural geometric dimension; the average photocurrent densities are mainly influenced by the variations of TE mode photocurrent densities caused by process deviation; the key for obtaining the optimally designing performance of a-Si solar cell is to effectively control process parameter deviation in the fabrication process of antireflective coating and imprinted template.
分 类 号:TK514[动力工程及工程热物理—热能工程]
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