电子辐射环境中NPN输入双极运算放大器的辐射效应和退火特性  

Radiation damage effect and post-annealing treatments of NPN-input bipolar operational amplifier in electron radiation environment

作　　者：姜柯[1,2,3] 陆妩[1,2] 胡天乐[1,2,3] 王信[1,2,3] 郭旗[1,2] 何承发[1,2] 刘默涵[1,2] 李小龙[1,2,3] 

机构地区：[1]中国科学院新疆理化技术研究所,中国科学院特殊环境功能材料与器件重点实验室,乌鲁木齐830011 [2]新疆电子信息材料与器件重点实验室,乌鲁木齐830011 [3]中国科学院大学,北京100049

出　　处：《物理学报》2015年第13期294-300,共7页Acta Physica Sinica

摘　　要：本文对不同偏置下的NPN输入双极运算放大器LM108分别在1.8 Me V和1 Me V两种电子能量下、不同束流电子辐照环境中的损伤特性及变化规律进行了研究,分析了不同偏置状态下其辐照敏感参数在辐照后三种温度(室温,100℃,125℃)下随时间变化的关系,讨论了引起电参数失效的机理,并且分析了器件在室温和高温的退火效应以讨论引起器件电参数失效的机理.结果表明,1.8 Me V和1 Me V电子对运算放大器LM108主要产生电离损伤,相同束流下1.8 Me V电子造成的损伤比1 Me V电子更大,相同能量下0.32Gy(Si)/s束流电子产生的损伤大于1.53 Gy(Si)/s束流电子.对于相同能量和束流的电子辐照,器件零偏时的损伤大于正偏时的损伤.器件辐照后的退火行为都与温度有较大的依赖关系,而这种关系与辐照感生的界面态密度增长直接相关.With the rapid development of the space technology, operational amplifier is widely used as the basic liner circuit in a satellite system. There are many charged particles trapped in the earth’s magnetosphere, most of the particles are protons and electrons. In BJTs, the damage caused by electrons causes both bulk recombination and surface recombination to increase and subsequently current gain to decrease. Transistor gain degradation is the primary cause of parametric shifts and functional failures in linear bipolar circuits. The severity of electron radiation response correlates with electron’s energy and flux, therefore it is important to understand the electron radiation response in different conditions. In this paper, the tested devices used in this study are NPN-input bipolar operational amplifiers commercial-off-the-shelf （COTS） manufactured by Texas Instruments （TI）. NPN-input bipolar operational amplifiers LM108 are irradiated with different energy and different beam current electrons respectively under different bias conditions to study the electron radiation damage effect. Experiment using 60Coγ-ray radiation is conducted to compare the different radiation damages between 60Co γ-ray and electron radiation. The total radiation experiments are carried out with the 60Coγ-ray source （Xinjiang Technical Institute of physics and chemistry）. The radiation dose rates for the test samples are 1 Gy （Si）/s, and the total accumulated dose is 1000 Gy （Si）. Subsequently, room temperature and high temperature annealings are conducted to analyze the parametric failure mechanism of LM108 caused by a total dose radiation for different biases. Result shows that 0.32 Gy（Si）/s beam current electrons can induce more damage than that caused by 1.53 Gy（Si）/s electrons with the same energy;1.8 MeV electrons can induce more damages than 1 MeV electrons with the same electron beam current because the former produces more displacement damage than the latter. Comparison between zero and forward b

关 键 词：NPN输入双极运算放大器 电子辐射 辐射效应 退火 

分 类 号：O562[理学—原子与分子物理]