(0001)SiC衬底MgB_2超薄膜的制备和性质研究  

PROPERTIES OF MgB_2 ULTRA-THINFILMS FABRICATED ON SIC(0001) SUBSTRATE

作　　者：陈雷[1] 马世成[1] 冯庆荣[2] 董兴辉[3] 朱凌志[4] 

机构地区：[1]华北电力大学数理学院,北京102206 [2]北京大学物理学院,北京100871 [3]华北电力大学能源动力与机械工程学院,102206 [4]中国电力科学研究院,南京210003

出　　处：《低温物理学报》2015年第4期262-266,共5页Low Temperature Physical Letters

基　　金：国家电网公司科技项目(批准号:NY71-13-036)资助的课题~~

摘　　要：利用混合物理化学气相沉积法(Hybrid physical-chemical vapor deposition简称为(HPCVD)在(0001)SiC衬底上制备了干净的MgB2超导超薄膜.在背景气体、压强、载气氢气流量以及B2H6的流量一定的情况下,改变沉积时间,制得一系列MgB2超薄膜样品。通过观察样品的表面形貌变化探究了MgB2超薄膜的生长过程.该系列超薄膜的生长遵循Volmer-Weber岛状生长模式且沿c轴外延生长.以20nm超薄膜作为例子,可知其表面连接性良好,超导转变温度Tc(0)≈38.5K,临界电流密度Jc≈0.82×107 A/cm2,表明了利用HPCVD在(0001)SiC衬底上制备的MgB2超薄膜有很好的性能.这预示其在超导电子器件上具有广阔的应用前景.We fabricate MgBe ultra-thin films via hybrid physics-chemical vapor deposition technique （HPCVD）. Under the same back-ground pressure, the same H2 flow rate and the same Be H6 flow rate, by changing the deposition time, we fabricate a series of ultra-thin films with different thickness and observe the surface morphology change of growth process. These films grow on （0001）SIC substrate, are all c-axis epitaxial, and follow the Volmer- Weber mode. The 20 nm ultra-thin film shows the good connectivity and a high Tc （0） ≈38. 5 K, a high Jc （0 T, 5 K） ≈ 0. 85× 107 A/cm2, which indicates that the films fabricated by HPCVD are well qualified for device applications. （0001）SiC substrate, MgBe ultra-thin film, hybrid physics-chemical vapor deposition.

关 键 词：SIC衬底 MgB2超薄膜 混合物理化学气相沉积 

分 类 号：O484.1[理学—固体物理]