GaN HEMT器件微波噪声模型参数提取  

Extraction Method for GaN HEMT Microwave Noise Model Parameters

作　　者：李静强[1] 胡志富[1] 崔玉兴[1] 刘会东[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2015年第7期507-511,共5页Semiconductor Technology

摘　　要：介绍了两种可以用于GaN高电子迁移率晶体管（HEMT）器件建模的噪声模型,Pucel等效电路噪声模型和Pospieszalski温度噪声模型。基于Pucel等效电路噪声模型,介绍了利用器件本征噪声参数推导Pucel噪声模型参数的过程,并且给出了微波噪声模型参数的表达式。利用上述方法,针对200μm栅宽的GaN HEMT器件,提取了噪声模型参数值,并且在ADS仿真软件平台上建立了GaN HEMT器件的Pucel等效电路噪声模型,仿真结果与实测结果在频率为4~18 GHz带宽内吻合较好,说明提出的噪声模型参数提取方法对于GaN HEMT器件噪声仿真的实用性和准确性。Two noise models used for GaN HEMT devices model,including the Pucel noise model and Pospieszalski temperature noise model were investigated,respectively. Based on the Pucel equivalent circuit noise model,the calculation process involved in the intrinsic noise parameters was described,and the expression about the noise model parameters was derived. Finally,based on the method above,the noise model parameters with the GaN HEMT of 200 μm gate-width was extracted and the Pucel equivalent circuit noise model was built in ADS software. In the frequenuy band from 4 GHz to 18 GHz,a good agreement between simulation and measurement results was obtained. And the results show that the extracting approach of noise parameter is usable and accurate for noise simulation of GaN HEMT.

关 键 词：氮化镓 高电子迁移率晶体管(HEMT) 噪声 模型 参数提取 

分 类 号：TN386[电子电信—物理电子学]