8kW高功率单刀四掷射频开关  

8 kW High Power SP4T RF Switch

作　　者：吴家锋[1] 吴程[2] 赵夕彬[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]江苏省江阴中等专业学校,江苏江阴214400

出　　处：《半导体技术》2015年第7期516-520,共5页Semiconductor Technology

摘　　要：介绍了pin二极管的工作原理,分析了大功率射频(RF)开关的主要参数及对应的设计方法,阐述了大功率射频开关设计过程中反向偏置电压的设计方法及安全性设计的考虑。运用ADS电路仿真软件对射频开关电路进行了仿真和优化,利用pin二极管的特性成功研制出了一款VHF波段8kW高功率单刀四掷(SP4T)射频开关。研制出的SP4T开关控制电平为0^-1000V的差分信号,可承受峰值功率大于8kW,平均功率大于1.5kW,当脉宽为60μs、占空比为25%时,插入损耗小于0.3dB,输入驻波比小于1.3∶1,开关隔离度大于55dB,转换时间小于50μs。The working principle of pin diode was introduced,the main parameters of the high power radio frequency（ RF） switch and design methods were analyzed. During the design of high power RF switch,the design method and the security design considerations of the reverse-bias voltage were introduced. The RF switch circuit was simulated and optimized by using the ADS circuit simulation software. A kind of VHF band 8 k W high power RF single pole four through（ SP4T） RF switch was developed successfully based on the characteristics of pin diode. The control voltage of SP4 T is 0 V to-1 000 V,which is a difference signal,the peak power which SP4 T can endured is more than 8 k W,the average power which SP4 T can endured is more than 1. 5 k W,when the pulse width is 60 μs and duty ratio is 25%,the insert loss is less than 0. 3 d B,input voltage standing wave ratio is less than 1. 3 ∶ 1,the isolation of switch is more than 55 d B,transfer time is less than 50 μs.

关 键 词：PIN二极管 单刀四掷开关(SP4T) 峰值功率 隔离度 转换时间 

分 类 号：TN722.75[电子电信—电路与系统] TN43