GaAs/AlGaAs量子阱红外探测器的量子阱参数设计  

Quantum Well Parameters Design of the GaAs/AlGaAs Quantum Well Infrared Photodetector

作　　者：张世伟[1] 齐利芳[1] 赵永林[1] 李宁[2] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083

出　　处：《半导体技术》2015年第7期521-524,530,共5页Semiconductor Technology

摘　　要：量子阱参数如势阱宽度、势垒高度和阱中的掺杂浓度决定了阱中的能级分布及光学吸收,它和量子阱红外探测器(QWIP)的响应波长、暗电流、响应率、探测率等特性参数密切相关。为了使设计的QWIP达到预期的各种性能指标,对其各参量进行了精心设计。运用量子阱的第一激发态与势垒的高度接近时产生共振效应,进行了量子阱的优化设计,得出垒高和阱宽的关系。另外,根据器件光谱响应的要求,利用传输矩阵法计算出相应的量子阱参数。此设计方法在GaAs/AlGaAs长波-长波双色QWIP中得到了较好的验证。The quantum well parameters such as the barrier height,well width and doping concentration determined the energy level distribution and the optical absorption. It is closely related to response wavelength,dark current,responsivity,detectivity parameters of quantum well infrared photodetectors（ QWIP）. In order to achieve the expected characteristic parameters of the QWIP,the parameters were designed carefully. Considering the resonance effect which was produced when the quantum well of the first excited state was close to the barrier height,the optimal design of the quantum well was done and the relations between the barrier height and well width were obtained. In addition,according to the device of spectral response,the corresponding quantum well parameters were calculated using the transmission matrix method. The design method was well verified in Ga As / Al Ga As long-long wave double color QWIP.

关 键 词：量子阱红外探测器(QWIP) 暗电流 光谱响应 探测率 双色 

分 类 号：TN304.24[电子电信—物理电子学] TN362