Growth of N-polar GaN on vicinal sapphire substrate by metal organic chemical vapor deposition  

作　　者：Can-Tao Zhong Guo-Yi Zhang 

机构地区：[1]State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University

出　　处：《Rare Metals》2014年第6期709-713,共5页稀有金属（英文版）

基　　金：financially supported by the National Basic Research Program of China (Nos. 2012CB619303 and 2012CB619304);the National Natural Science Foundation of China (Nos. 11023003, 10990102, 11174008 and 61076012);the National High Technology Research & Development Project of China (No. 2011AA03A103)

摘　　要：The growth and properties of N-polar Ga N layers by metal organic chemical vapor deposition（MOCVD） were reported. It is found that N-polar Ga N grown on normal sapphire substrate shows hexagonal hillock surface morphology. With the misorientation angles increasing from 0.5° to 2.0° toward the a-plane of the sapphire substrate, the number of the hillock becomes less and less and finally the surface becomes flat one on the sapphire substrate with the misorientation angle of 2°. It is also found that the crystalline quality and the strain in the Ga N are greatly influenced by the misorientation angle.The growth and properties of N-polar Ga N layers by metal organic chemical vapor deposition（MOCVD） were reported. It is found that N-polar Ga N grown on normal sapphire substrate shows hexagonal hillock surface morphology. With the misorientation angles increasing from 0.5° to 2.0° toward the a-plane of the sapphire substrate, the number of the hillock becomes less and less and finally the surface becomes flat one on the sapphire substrate with the misorientation angle of 2°. It is also found that the crystalline quality and the strain in the Ga N are greatly influenced by the misorientation angle.

关 键 词：GAN N-polarity Metal organic chemical vapor deposition 

分 类 号：TQ133.51[化学工程—无机化工] O78[理学—晶体学]