Al/Ga共掺杂ZnO透明导电薄膜的正交优化  

ORTHOGONAL OPTIMIZATION OF Al/Ga CO-DOPED ZnO TRANSPATENT CONDUCTING THIN FILM

作　　者：马洪芳[1,2] 马芳[1] 刘志宝[3] 王小蕊[1] 孙华[1] 张长存[1] 

机构地区：[1]山东建筑大学材料科学与工程学院,济南250101 [2]教育部省部共建可再生能源建筑利用技术重点实验室,济南250101 [3]山东省化工研究院,济南250014

出　　处：《太阳能学报》2015年第7期1550-1555,共6页Acta Energiae Solaris Sinica

基　　金：国家自然科学基金(51275279);山东省科技发展计划(2010G0020318);山东省自然科学基金(ZR2010EM062);济南市高校自主创新计划(201401233);山东省教育厅科技计划(J12LA12)

摘　　要：利用正交试验,对溶胶-凝胶法(sol-gel)制备Al/Ga共掺杂Zn O透明导电薄膜(GAZO)的工艺进行优化,研究溶胶浓度、掺杂配比、热处理温度、薄膜厚度等因素对薄膜光电性能的影响规律。分别以薄膜的透光率和电阻率作为评价指标,确定制备GAZO薄膜的最佳工艺参数。采用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、可见分光光度计和双电测四探针电阻率测试仪分别分析薄膜的结构、表面形貌以及光电性能等。结果表明:Al和Ga的掺入未影响Zn O的晶体结构,也未生成其他杂质氧化物。最佳工艺条件下,薄膜在可见光范围内的透过率为88.458%,电阻率为2.66×10^(-3)Ω·cm。By using the orthogonal test, the sol-gel preparation process of A1/Ga co-doped ZnO transparent conducting thin film was optimized. The sol concentration, heat treatment temperature, thickness and other factors on the photoelectric property of the thin films were also studied. The light transmittance and resistivity were used as evaluation index to determine the optimum parameters of GAZO films. X-ray diffraction （XRD） , scanning electron microscopy （SEM）, spectrophotometer, four probe resistivity tester and other technologies were used to analyzeand test the films, respectively. The results showed that the incorporation of A1 and Ga do not affect the crystal structure of ZnO, and do not generate other oxide impurities. Under the optimum conditions, the transmittance of the film in the visible range is 88.458%, and the resistivity is 2.66×10-3Ω·cm..

关 键 词：溶胶-凝胶法 正交试验 共掺杂 GAZO薄膜 光电性能 

分 类 号：TB34[一般工业技术—材料科学与工程]