小顶角平台硅中阶梯光栅光刻胶掩模制备工艺研究  

Fabrication of photoresist mask of silicon echelle grating with small top plane

作　　者：焦庆斌 

机构地区：[1]中国科学院长春光学精密机械与物理研究所,吉林长春130033

出　　处：《长春工业大学学报》2015年第3期288-292,共5页Journal of Changchun University of Technology

基　　金：国家863计划基金资助项目(2010AA1221091001)

摘　　要：为降低硅中阶梯光栅制作工艺中顶角平台对光栅衍射效率的影响,提出了"紫外曝光-倒置热熔"结合法用于制备具有小占宽比的光刻胶掩模,对中阶梯光栅设计、硅基片准备以及光刻胶掩模制备等环节进行了研究。AFM测试结果表明,可以制备占宽比为1∶5的光刻胶掩模,远远超出光栅理论设计中对顶角平台尺寸的要求。To reduce the influence of top plane on the grating diffractive efficiency during the fabrication of silicon echelle grating, a method combined UV exposure and inverted melt is presented to produce the photoresist mask with small duty cycle is proposed here. The techniques such as the design of echeUe grating, the preparation of silicon and the fabrication of photoresist mask are studied in detail. AFM test results show that the duty cycle rate of the photoresist mask with the method is 1 ： 5 , which meets the requirement of the size of top plane theoretically.

关 键 词：紫外曝光 倒置热熔 硅中阶梯光栅 湿法刻蚀 

分 类 号：O434.2[机械工程—光学工程] O433.4[理学—光学]