2μm半导体激光器有源区量子阱数的优化设计  

Optimization of the number of quantum wells in the active region for 2 μm laser diode

作　　者：安宁[1] 刘国军[1] 李占国[1] 李辉[1] 席文星 魏志鹏[1] 马晓辉[1] 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《红外与激光工程》2015年第7期1969-1974,共6页Infrared and Laser Engineering

基　　金：国家自然科学基金(61006039;61370043)

摘　　要：利用LASTIP软件理论分析了有源区量子阱数目对不同组分的In Ga As Sb/Al Ga As Sb 2μm半导体激光器能带、电子与空穴浓度分布以及辐射复合率等性能参数的影响。研究表明：量子阱的个数是影响激光器件性能的关键参数,需要综合分析和优化。量子阱数太少时,量子阱对电子束缚能力弱,电子在p层中泄漏明显,辐射复合率低。量子阱数过多时,载流子在阱内分配不均匀,p型层中电子浓度升高,器件内损耗加大,辐射复合率下降。结合对外延材料质量的分析,In Ga As Sb/Al Ga As Sb半导体激光器有源区最优量子阱数目为2~3。该研究结果可合理地解释已有实验报道,并为2μm半导体激光器结构设计提供理论依据。In order to find the appropriate quantum well number, the electrical and optical characteristics of In Ga As Sb/Al Ga As Sb laser diode with various QW numbers and contents were investigated using LASTIP simulation program. In the case of single QW, the total number of carriers injected into the QW will be small and the radiative recombination will be poor. When the number of QWs was increased into larger than 4, however, the optical performance started to degrade because of the uneven distribution of carrier concentration and the higher electron concentration in the p-side, which increased in the internal loss in the active region. Taking into account of the effect of QWs number on the epitaxy layers quality,the optimized number of In Ga As Sb/Al Ga As Sb 2 μm LDs was 2-3. The obtained results are beneficial to the design of the high performance 2 μm Sb-containing LDs.

关 键 词：多量子阱激光器 有源区量子阱数目 数值模拟 

分 类 号：TN243[电子电信—物理电子学]