射频磁控溅射法ZnO薄膜制备工艺的优化  

The optimization of process parameters of the ZnO films prepared by RF magnetron sputtering

作　　者：王怡[1] 李合增[1] 李东临[1] 郭瑞[1] 

机构地区：[1]北京石油化工学院数理系,北京102617

出　　处：《真空》2015年第4期55-59,共5页Vacuum

摘　　要：用射频磁控溅射制备ZnO薄膜,研究了溅射功率、溅射气体中氧氩以及工作气压对薄膜结构和光学性能的影响。通过对不同制备条件下的薄膜结构和薄膜的室温透射谱的分析,得到了磁控溅射制备ZnO薄膜的最佳工艺参数。The high-quality c-axis orienied ZnO films were prepared by RF magnetron sputtering on glass substrate. The influ-ence on quality of films of experimental parameters such as sputtering power, ratio of oxygen and argon and working pressure was systematieally analyzed and the influence of experimental parameters on transmission was also discussed. The optimization of pro-cess parameters of the ZnO films was obtained.

关 键 词：射频磁控溅射 ZNO薄膜 薄膜结构 透射谱 

分 类 号：O614.41[理学—无机化学]