铜铟铝硒薄膜离子束溅射制备与表征  

Synthesis and Characterization of Ion-Beam Sputtered Copper Indium Aluminum Selenide Coatings

作　　者：邱云明[1] 梁广兴[1] 陈超铭[1] 范平[1] 

机构地区：[1]深圳大学物理科学与技术学院,深圳518060

出　　处：《真空科学与技术学报》2015年第7期872-877,共6页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学青年科学基金项目(61404086);深圳大学青年教师科研启动项目(2014017)

摘　　要：采用离子束溅射方法,在玻璃衬底上沉积Cu,In,Al和Se,在同一真空环境下进行退火处理,制备得到铜铟铝硒(CIAS)太阳电池吸收层薄膜。利用扫描电镜、X射线衍射仪、能谱仪、四探针系统、分光光度计分别对薄膜的表面形貌、物相结构、晶粒尺寸、元素含量、电阻率和禁带宽度等特性进行分析。结果表明:通过控制铜铟、Cu、Al、Se各靶材的镀膜时间,实现在Cu In Se2薄膜上掺杂Al元素,制备的CIAS薄膜呈现黄铜矿结构。薄膜(112)衍射峰峰位,表面电阻率和禁带宽度随着铝含量的增加而增加,调节Al元素的含量可以使薄膜表面均匀。当Al的原子分数比X(Al)=14.47%时,(112)衍射峰最强,半高宽最小,结晶最好。当X(Al)=11.8%,N(Al)/(N(In)+N(Al))=0.37,禁带宽度为2.12 e V,薄膜表面形貌最均匀。The copper indium aluminum selenide （CIAS） coatings,to be used as an absorption layer of solar cells, were synthesized by ion beam co-sputtering on substrate of soda lime glass. The impact of the deposition conditions, in- cluding but not limited to the M-content, argon flow rate and pressure, on the microstructures and properties of the CIAS coatings were investigated with spectrophotometer, X-ray diffraction, scanning electron microscopy, energy disperse spec- troscopy, and conventional surface probes. The results show that the M-content has a major impact on the microstmctures electronic structures and properties of the （112） preferentially oriented, chalcopyrite-structured CIAS coatings. To be spe- cific,as the M-content increased,the resistivity and band-gap of the coating increased.With an M-content of 11.8 5%, and the atomic fraction ratio of N （M）/（ N （In） ＋ N （M） ） = 0.37, the compact, well-crystallized CIAS coating has a band gap of 2.12 eV.

关 键 词：薄膜太阳电池 铜铟铝硒 离子束溅射 

分 类 号：O53[理学—等离子体物理] TP34[理学—物理]