Microstructures of InN film on 4H-SiC(0001) substrate grown by RF-MBE  

作　　者：P.Jantawongrit S.Sanorpim H.Yaguchi M.Orihara P.Limsuwan 

机构地区：[1]Department of Physics, Faculty of Science, King Mongkut’s University of Technology Thonburi [2]Thailand Center of Excellence in Physics, CHE, Ministry of Education [3]Department of Physics, Faculty of Science, Chulalongkorn University [4]Graduate School of Science and Engineering, Saitama University

出　　处：《Journal of Semiconductors》2015年第8期37-41,共5页半导体学报（英文版）

基　　金：supported by the Thailand Center of Excellence in Physics(Th EP);the King Mongkut’s University of Technology Thonburi under The National Research University Project;supported by the National Research Council of Thailand(NRCT);the Thai Government Stimulus Package 2(TKK2555);the Project for Establishment of Comprehensive Center for Innovative Food,Health Products and Agriculture

摘　　要：InN film was grown on 4H-SiC （0001） substrate by RF plasma-assisted molecular beam epitaxy （RF- MBE）. Prior to the growth of InN film, an InN buffer layer with a thickness of ～5.5 nm was grown on the substrate. Surface morphology, microstructure and structural quality of InN film were investigated. Micro-structural defects, such as stacking faults and anti-phase domain in InN film were carefully investigated using transmission electron microscopy （TEM）. The results show that a high density of line contrasts, parallel to the growth direction （c-axis）, was clearly observed in the grown InN film. Dark field TEM images recorded with diffraction vectors g = 1120 and g = 0002 revealed that such line contrasts evolved from a coalescence of the adjacent rnisoriented islands during the initial stage of the InN nucleation on the substrate surface. This InN nucleation also led to a generation of anti-phase domains.InN film was grown on 4H-SiC （0001） substrate by RF plasma-assisted molecular beam epitaxy （RF- MBE）. Prior to the growth of InN film, an InN buffer layer with a thickness of ～5.5 nm was grown on the substrate. Surface morphology, microstructure and structural quality of InN film were investigated. Micro-structural defects, such as stacking faults and anti-phase domain in InN film were carefully investigated using transmission electron microscopy （TEM）. The results show that a high density of line contrasts, parallel to the growth direction （c-axis）, was clearly observed in the grown InN film. Dark field TEM images recorded with diffraction vectors g = 1120 and g = 0002 revealed that such line contrasts evolved from a coalescence of the adjacent rnisoriented islands during the initial stage of the InN nucleation on the substrate surface. This InN nucleation also led to a generation of anti-phase domains.

关 键 词：RF-MBE TEM INN threading dislocation anti-phase domain crystal polarity 

分 类 号：TN304.054[电子电信—物理电子学] TN386